| 摘要 |
The magnetoresistance effect film has a magnetic oxide layer for fixing a magnetizing direction of a pinned magnetic layer and a greater MR ratio. The magnetoresistance effect film has a layered structure, in which a seed layer, the magnetic oxide layer, the pinned magnetic layer, a nonmagnetic intermediate layer, and a free magnetic layer are layered in this order, wherein the seed layer is an oxide layer being made of or including an oxide, which has a sodium chrolide (NaCl) type crystal structure, whose energy gap is 1 eV or more, and which is nonmagnetizable at room temperature, and wherein the magnetic oxide layer is an oxide layer including ferrite, which includes cobalt.
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