发明名称 |
Method of forming an element of a microelectronic circuit |
摘要 |
A method is described for forming an element of a microelectronic circuit. A sacrificial layer is formed on an upper surface of a support layer. The sacrificial layer is extremely thin and uniform. A height-defining layer is then formed on the sacrificial layer, whereafter the sacrificial layer is etched away so that a well-defined gap is left between an upper surface of the support layer and a lower surface of the height-defining layer. A monocrystalline semiconductor material is then selectively grown from a nucleation silicon site through the gap. The monocrystalline semiconductor material forms a monocrystalline layer having a thickness corresponding to the thickness of the original sacrificial layer.
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申请公布号 |
US6972228(B2) |
申请公布日期 |
2005.12.06 |
申请号 |
US20030387623 |
申请日期 |
2003.03.12 |
申请人 |
INTEL CORPORATION |
发明人 |
DOYLE BRIAN S.;MURTHY ANAND S.;CHAU ROBERT S. |
分类号 |
H01L21/20;H01L29/12;H01S5/34;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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