发明名称 |
CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, (METH)ACRYLATE DERIVATIVE, AND PROCESS FOR PRODUCING SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition having performances such as resolution, sensitivity and a pattern feature suitable for ArF excimer laser lithography as well as showing preferable line edge roughness, and to provide a chemically amplified positive resist composition giving a finer pattern in a reflow process. <P>SOLUTION: The composition is a radiation-sensitive composition comprising the following resin and an acid generating agent. The resin contains a repeating unit expressed by formula (I) and at least one repeating unit selected from a group consisting of repeating units expressed by formulae (II) to (V). In formula (I), X represents a hydrogen atom, a 1-4C alkyl group or a 1-4C perfluoroalkyl group; Y represents a plurality of atoms necessary to complete an alicyclic hydrocarbon group with the carbon atom in the formula; Z represents a 1-12C bivalent hydrocarbon group; and R represents a 1-6C alkyl group or a 3-12C alicyclic hydrocarbon group. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005331918(A) |
申请公布日期 |
2005.12.02 |
申请号 |
JP20050050664 |
申请日期 |
2005.02.25 |
申请人 |
SUMITOMO CHEMICAL CO LTD |
发明人 |
TAKEMOTO KAZUKI;YOSHIDA ISAO;MIYAGAWA TAKAYUKI |
分类号 |
G03F7/039;C07C69/00;C07C69/67;C07D307/33;C08F20/10;C08F220/18;C08F220/28;G03C5/00;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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