| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition useful for a process using light with shorter wavelength than KrF excimer laser light, for example, F<SB>2</SB>excimer laser light (157 nm) or EUV (vacuum ultraviolet light 13 nm), allowing formation of resist pattern with high resolution and good shape of cross section, and to provide an alkali-soluble polysiloxane resin capable of providing a substrate provided with the resist layer. SOLUTION: The invention relates to the alkali-soluble polysiloxane resin comprising a siloxane unit (a1) containing an alkali-soluble group and a siloxane unit (a2) containing an alkali-insoluble group excluding an acid-dissociable group. COPYRIGHT: (C)2006,JPO&NCIPI |
