发明名称 |
THIN FILM TRANSISTOR SUBSTRATE FOR DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A thin film transistor substrate of a LCD device and a fabricating method thereof are disclosed for simplifying a fabricating process and enlarging a capacitance value of a storage capacitor without any reduction of aperture ratio. The LCD device includes: a double-layered gate line having a first transparent conductive layer and a second opaque conductive layer, the second opaque conductive layer have a step coverage; a gate insulation layer film on the gate line; a data line crossing the gate line to define a pixel region; a TFT connected to the gate line and the data line; a pixel electrode connected to the TFT via a contact hole of a protective film on the TFT; and a storage capacitor overlapping the pixel electrode and having a lower storage electrode formed of the first transparent conductive layer. |
申请公布号 |
KR20050112644(A) |
申请公布日期 |
2005.12.01 |
申请号 |
KR20040037770 |
申请日期 |
2004.05.27 |
申请人 |
LG.PHILIPS LCD CO., LTD. |
发明人 |
AHN, BYUNG CHUL |
分类号 |
G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/04;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1343 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|