| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND flash memory device in which multi-I/O repair is possible. <P>SOLUTION: In the device, first and second page buffers are arranged at a main array, third and fourth page buffers are arranged at a redundancy array, first and second address fuse blocks for selecting the third and fourth page buffers respectively, and first and second I/O fuse blocks for selecting any one data in data transmitted from the first to the fourth page buffers and transmitting them to I/O buffers through the first data line are included. In the repair method of this device, according to the address of a main column to be repaired, first and second data are transmitted via the second and third data lines from the third and fourth page buffers respectively, and the first and second data are transmitted to the first data line according to output signal of the first and second I/O fuse blocks, and the repair of the main column is performed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
