| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem of an increase in manufacturing costs and decrease in manufacturing yield, which is caused by an increase in the number of processes resulted from more complicated manufacturing processes required for forming a TFT which copes with various circuits of an active matrix substrate. <P>SOLUTION: In a driving circuit, a p-channel TFT has a single drain structure, and an n-channel TFT has a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode arranged in a pixel portion is formed on an interlayer insulation film made of an organic insulator material, and is connected to the pixel TFT through an opening bored at least in a protective insulation film that is provided above a gate electrode of the pixel TFT and is made of an inorganic insulator material and in the interlayer insulation film formed on the insulation film in close contact therewith. These processes use 6 to 8 photomasks. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2005328088(A) |
申请公布日期 |
2005.11.24 |
| 申请号 |
JP20050221101 |
申请日期 |
2005.07.29 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;KOYAMA JUN |
| 分类号 |
G02F1/1368;G02F1/1362;H01L21/00;H01L21/60;H01L21/77;H01L21/84;H01L23/552;H01L23/60;H01L27/12;H01L27/146;H01L29/04;H01L29/786 |
主分类号 |
G02F1/1368 |
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