| 摘要 |
PROBLEM TO BE SOLVED: To avoid a so-called process antenna problem that an insulating film under a gate electrode of a transistor formed over a semiconductor substrate is damaged by accumulated charge when wiring connected to the relevant gate electrode is formed while the requirement for the signal transmission characteristic of a wiring region is satisfied and the number of manufacturing processes requiring mask correction is controlled. SOLUTION: An n-type diffusing layer region 32 forming a protection diode is previously formed to a region near the gate electrode 36 together with an n-type diffusing layer region 30 and a p-type diffusing layer region 34 forming a transistor over a semiconductor substrate. The n-type diffusing layer region 32 is isolated without connection to the wiring 46 shorter than a standard wiring length. Meanwhile, when the wiring length exceeds the standard wiring length because of a change in layout, the wiring is connected to the n-type diffusing layer region 32 to enable the discharge of the accumulated charge. COPYRIGHT: (C)2006,JPO&NCIPI |
