| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the profile of a resist pattern obtained by means of immersion lithography. <P>SOLUTION: The equipment for producing a semiconductor comprises a section 45 for supplying liquid 25 arranged on a movable stage 36 for holding a wafer 20 having a resist film formed thereon, an exposure section 34 for irradiating the resist film with exposure light via a mask 32, in a state where the liquid 25 is arranged on the resist film, and a section 40 for degassing the liquid 25. Since the liquid 25, degassed at the degassing section 40, is arranged and bubbles contained in the liquid 25 or produced during exposure can be removed, abnormal exposures such as abnormal diffraction can be prevented, resulting in a resist pattern having a proper profile. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
