| 摘要 |
The present invention provides a method for forming a low-k dielectric structure on a substrate 10 that includes depositing, upon the substrate, a dielectric layer 12. A multi-film cap layer 18 is deposited upon the dielectric layer. The multi-film cap layer includes first 181 and second 182 films, with the second film being disposed between the dielectric layer and the first film. The first film typically has a removal rate associated therewith that is less than the removal rate associated with the second film. A deposition layer 20 is deposited upon the multi-film cap layer and subsequently removed. The properties of the multi-film cap layer are selected so as to prevent the dielectric layer from being exposed/removed during removal of the deposition film. In this manner, a deposition layer, having variable rates of removal, such as copper, may be planarized without damaging the underlying dielectric layer.
|
