发明名称 METHOD OF MANUFACTURING EEPROM CELL
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an EEPROM cell with an improved process of forming a tunnel oxide layer. SOLUTION: The method of manufacturing EEPROM cell includes the steps of: forming a first conductive layer pattern and a tunneling oxide layer, under the first conductive layer pattern; forming a second conductive layer pattern on both sides of the first conductive layer pattern via a gate oxide layer formed on the sidewalls of the first conductive layer pattern and a substrate; then electrically connecting the two patterns to form a conductive layer for a floating gate; forming a coupling oxide layer and a third conductive layer on the conductive layer for a floating gate; and then patterning these layers to create a selected transistor section on the tunneling oxide layer and a control transistor section, wherein the select transistor section has formed a gate stack made up of a selected gate, a first coupling oxide layer pattern and a first floating gate, and the control transistor section has, separated from the select transistor section, a gate stack made up of a control gate, a second coupling oxide layer pattern and a second floating gate. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005322920(A) 申请公布日期 2005.11.17
申请号 JP20050134634 申请日期 2005.05.02
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JEON HEE-SEOG;YOON SEUNG-BEOM;KIN RYUTAI
分类号 H01L21/8247;H01L21/28;H01L21/336;H01L21/8242;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/8247
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