| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a trench capacitor, a method of manufacturing a memory cell, the trench capacitor and the memory cell. <P>SOLUTION: The method of manufacturing a storage capacitor (23) comprising a first capacitor electrode (6), a first dielectric layer (7), a second capacitor electrode (8), a second dielectric layer (9) and a third capacitor electrode (10). The first capacitor electrode (6) and the third capacitor electrode are connected to each other. In this method, the first capacitor electrode (6) and the third capacitor electrode (10) are formed by conformal deposition method; whereas, the first dielectric layer (7), the second capacitor electrode (8) and the second dielectric layer (9) are formed by non-conformal method. Accordingly, the trench capacitor, in which storage capacitance is increased, can be made. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
