发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device includes a semiconductor substrate, a plurality of memory cell transistors and select gate transistors both formed in a memory cell region of the semiconductor substrate, and a transistor formed in a peripheral circuit region of the substrate and having a high breakdown voltage. Each select gate transistor of the memory cell region has a gate electrode under which an ion implanted layer is formed for adjustment of a threshold. The transistor having the high breakdown voltage includes a contact region around which a gate insulation film remains.
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申请公布号 |
US2005253202(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20050126285 |
申请日期 |
2005.05.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAMIYA EIJI;IIZUKA HIROHISA;HAZAMA HIROAKI;NARITA KAZUHITO;OHTANI NORIO |
分类号 |
H01L21/8234;H01L21/265;H01L21/60;H01L21/768;H01L21/8242;H01L21/8247;H01L27/088;H01L27/10;H01L27/115;H01L29/04;H01L29/788;H01L29/792;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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