| 摘要 |
An embodiment of the invention is a method of manufacturing a semiconductor wafer. The method includes depositing spin-on-glass material over the semiconductor wafer (step 208 ), modifying a top surface of the spin-on glass material to form a SiO<SUB>2 </SUB>layer (step 210 ), applying a vapor prime (step 212 ), forming a photoresist layer over the spin-on-glass material (step 214 ), patterning the photoresist layer (step 214 ), and then etching the semiconductor wafer (step 216 ). Another embodiment of the invention is a method of manufacturing a dual damascene back-end layer on a semiconductor wafer. The method includes depositing spin-on-glass material over the dielectric layer and within the via holes (step 208 ), modifying a top surface of the spin-on glass material to form a SiO<SUB>2 </SUB>layer (step 210 ), applying a vapor prime (step 212 ), forming a photoresist layer over said spin-on-glass material (step 214 ), patterning the photoresist layer (step 214 ), and etching trench spaces (step 216 ).
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