| 摘要 |
A method of forming a capacitor includes sequentially forming a barrier layer, a second dielectric layer, and a conductive layer on a surface of a first dielectric layer and conductors in the first dielectric layer, performing an etching process to remove portions of the barrier layer, the second dielectric layer, and the conductive layer to form the capacitor, and performing a contacting process to connect the conductive layer of the capacitor to a first terminal through a first contact plug.
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