发明名称 |
PHOTOCHEMICAL SEMICONDUCTOR ELEMENT THAT ACCUMULATES HYDROGEN |
摘要 |
The proposed photochemical semiconductor element that accumulates hydrogen contains an accumulating electrode and a photoanode. The accumulating electrode is made of LaNi2,5Co2,4Al0,1 alloy that absorbs hydrogen. The photoanode is made of gallium arsenide with electron conductivity, with a surface layer alloyed by platinum. The accumulating electrode is installed in the chamber that is filled with alkaline solution and separated from the anode chamber by a cation-exchange diaphragm. The photoanode is installed in hyposulfide solution. The proposed element can be used in plants for converting solar energy into chemical energy of hydrogen. |
申请公布号 |
UA75975(C2) |
申请公布日期 |
2005.11.15 |
申请号 |
UA20040503320 |
申请日期 |
2004.05.05 |
申请人 |
I.M. FRANTSEVYCH INSTITUTE OF MATERIALS SCIENCE OF THE NAS OF UKRAINE;INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY OF THE NAS OF UKRAINE |
发明人 |
SOLONIN YURII MYKHAILOVYCH;KOLBASOV HENNADII YAKOVYCH;RUSETSKYI IHOR ANATOLIIOVYCH;DAN''KO DMYTRO BORYSOVYCH |
分类号 |
H01M6/30 |
主分类号 |
H01M6/30 |
代理机构 |
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地址 |
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