发明名称 PHOTOCHEMICAL SEMICONDUCTOR ELEMENT THAT ACCUMULATES HYDROGEN
摘要 The proposed photochemical semiconductor element that accumulates hydrogen contains an accumulating electrode and a photoanode. The accumulating electrode is made of LaNi2,5Co2,4Al0,1 alloy that absorbs hydrogen. The photoanode is made of gallium arsenide with electron conductivity, with a surface layer alloyed by platinum. The accumulating electrode is installed in the chamber that is filled with alkaline solution and separated from the anode chamber by a cation-exchange diaphragm. The photoanode is installed in hyposulfide solution. The proposed element can be used in plants for converting solar energy into chemical energy of hydrogen.
申请公布号 UA75975(C2) 申请公布日期 2005.11.15
申请号 UA20040503320 申请日期 2004.05.05
申请人 I.M. FRANTSEVYCH INSTITUTE OF MATERIALS SCIENCE OF THE NAS OF UKRAINE;INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY OF THE NAS OF UKRAINE 发明人 SOLONIN YURII MYKHAILOVYCH;KOLBASOV HENNADII YAKOVYCH;RUSETSKYI IHOR ANATOLIIOVYCH;DAN''KO DMYTRO BORYSOVYCH
分类号 H01M6/30 主分类号 H01M6/30
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