| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for crystallization, which realizes sufficient crystal growth from a crystal nucleus to produce a crystallized semiconductor with a large particle diameter, while suppressing the influence of thermal diffusion or the release of latent heat, in the final stage of the crystal growth. SOLUTION: The device for crystallization is provided with: a first optical modulating element 1 adapted for producing a V-shaped first light-intensity distribution of light flux on a non-single crystal semiconductor 5, being generated by modulating the phase of incident first light flux; a second optical modulating element 2, adapted for producing a second light-intensity distribution of light flux on the non-single crystal semiconductor, with the second light-intensity distribution being generated by modulating the phase of incident second light flux; and an illumination system 3 that causes the first light flux to be incident on the first optical modulating element and the second light flux to be incident on the second optical modulating element, after a delay of a prescribed time period, from the initiation of incidence of the first light flux onto the first optical modulating element, to compensate for the temporal flattening of the temperature gradient in the high temperature region of the V-shaped temperature distribution, produced on the non-single semiconductor corresponding to the V-shaped first light-intensity distribution. COPYRIGHT: (C)2006,JPO&NCIPI
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