发明名称 CMOS IMAGE SENSOR CAPABLE OF HIGH-SPEED PROCESSING OF ANALOG SIGNAL
摘要 PROBLEM TO BE SOLVED: To provide a CMOS image sensor capable of layout of CDS circuit for every 2 pixel pitch while the totally high speed operation of the element is attained even if a relatively low speed system is used. SOLUTION: In a pixel array unit, first, second and third pixels corresponding to a plurality of first, second and third colors respectively are arranged in matrix, and one CDS circuit for every two adjoining rows of the pixel array unit, and a first CDS unit for reciving an output signal of the first pixel corresponding to one of these two rows are provided. A first analog signal processing path on one side of the pixel array unit and one CDS circuit for every two adjoining rows of the pixel array unit are provided, and a second CDS unit for receiving an output signal of the second or third pixel corresponding to one row of these two rows. In addition, a second analog signal processing path at the other side of the pixel array unit is provided. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005318544(A) 申请公布日期 2005.11.10
申请号 JP20050091692 申请日期 2005.03.28
申请人 MAGNACHIP SEMICONDUCTOR LTD 发明人 BAE CHANG-MIN
分类号 H01L27/146;H04N5/335;H04N5/357;H04N5/363;H04N5/374;H04N5/378;H04N9/07;(IPC1-7):H04N9/07 主分类号 H01L27/146
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