GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A Group III nitride semiconductor light-emitting device includes a crystal substrate, an n-type and a p-type semiconductor of AlXGaYInZN1-aMa, wherein 0 <= X <= 1, 0 <= Y <= 1, 0 <= Z <= 1, X + Y + Z = 1, M denotes a Group V element other than N, and 0 <= a < 1, formed on the crystal substrate, and a light-emitting layer including a region doped with Ge.