| 发明名称 |
Method of forming a super-junction semiconductor device |
| 摘要 |
In one embodiment, a transistor is formed to have alternating depletion and conduction regions that are formed by doping the depletion and conduction regions through an opening in a substrate of the transistor.
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| 申请公布号 |
US2005250257(A1) |
申请公布日期 |
2005.11.10 |
| 申请号 |
US20040841670 |
申请日期 |
2004.05.10 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. |
发明人 |
HOSSAIN ZIA;VENKATRAMAN PRASAD |
| 分类号 |
H01L21/22;H01L21/331;H01L21/332;H01L21/336;H01L21/38;H01L21/76;H01L21/8234;H01L29/06;H01L29/78;(IPC1-7):H01L21/332;H01L21/823 |
主分类号 |
H01L21/22 |
| 代理机构 |
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