| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a phase shift mask blank having a light translucent film or a light translucent portion having a predetermined phase angle and transmittance and being superior in film characteristics such as chemical resistance, light resistance and internal stress. <P>SOLUTION: The method of manufacturing a halftone phase shift mask blank having a light translucent film on a transparent substrate is carried out by sputtering a target containing 70 to 95 mol% silicon and metal in an atmosphere containing nitrogen to form a light translucent film containing nitrogen, metal and silicon and having compressive stress on the transparent substrate, and heat treating the light translucent film at a temperature higher than the baking temperature of a resist film to be formed on the light translucent film, so as to reduce the internal stress of the light translucent film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
