Solution-processed thin film transistor

摘要

One exemplary embodiment of the present disclosure includes a solution-processed thin film transistor having a number of a number of conductive solution-processed thin film contacts, semiconductor solution-processed thin film active regions, and dielectric solution-processed thin film isolations formed in a sequence and organization to form a solution-processed thin film structure. One or more of the semiconductor solution-processed thin film active regions and the dielectric solution-processed thin film isolations have been selectively ablated.