HAFNIUM-CONTAINING MATERIAL FOR FILM FORMATION AND METHOD FOR PRODUCING HAFNIUM-CONTAINING THIN FILM PRODUCED FROM THE MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a hafnium-containing material for forming a film having excellent vaporization stability and higher film formation rate, to provide a method for producing the film, and to provide a method for producing a hafnium-containing thin film having satisfactory step coverage. SOLUTION: The invention is the improvement of a hafnium-containing material for film formation comprising an organic hafnium compound having a bond of a hafnium atom and a nitrogen atom, or a bond of a hafnium atom and an oxygen atom. The content of Zr contained in the material is equal to or less than 650 ppm. COPYRIGHT: (C)2006,JPO&NCIPI