发明名称 |
STRAINED SILICON MOSFETS HAVING REDUCED DIFFUSION OF N-TYPE DOPANTS |
摘要 |
Processing is performed during fabrication of a strained silicon NMOS device to create point defects in silicon germanium (40) portions of source regions, and optionally of drain regions, prior to activation of source and drain region dopants. The point defects retard diffusion of the n-type dopants in the silicon germanium material (40), effectively lengthening the duration of the diffusivity transient region and resulting in lower overall dopant diffusivity during activation. |
申请公布号 |
WO2005064644(A3) |
申请公布日期 |
2005.11.10 |
申请号 |
WO2004US28593 |
申请日期 |
2004.09.01 |
申请人 |
ADVANCED MICRO DEVICES, INC.;XIANG, QI |
发明人 |
XIANG, QI |
分类号 |
H01L21/265;H01L21/268;H01L21/336;H01L29/10 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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