发明名称 Dielectric stack
摘要 An integrated circuit with a pressure resistant current carrying structure having electrically conductive layers for carrying current. A first electrically nonconductive material at least partially surrounds the electrically conductive layers, and provides electrical insulation between the electrically conductive layers. The first electrically nonconductive material has a first degree of fragility and a first dielectric constant. A second electrically nonconductive material is disposed in a pattern within the first electrically nonconductive material and between the electrically conductive layers, and provides structural support for the first electrically nonconductive material between the electrically conductive layers. The second electrically nonconductive material has a second degree of fragility that is less than the first degree of fragility and a second dielectric constant that is greater than the first dielectric constant.
申请公布号 US6963138(B2) 申请公布日期 2005.11.08
申请号 US20030357142 申请日期 2003.02.03
申请人 LSI LOGIC CORPORATION 发明人 LOW QWAI H.;CHIA CHOK J.;RANGANATHAN RAMASWAMY;LAU TAUMAN T.
分类号 H01L23/485;H01L23/532;(IPC1-7):H01L23/48 主分类号 H01L23/485
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