发明名称 |
Monitoring low temperature rapid thermal anneal process using implanted wafers |
摘要 |
A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth of the silicon material. The plurality of particles have a reduced activation energy within the silicon material. The method subjects the monitor wafer including the plurality of particles into a rapid thermal anneal process. The method includes applying the rapid thermal anneal process at a first state including a first temperature. The first temperature is within a range defined as a low temperature range, which is less than 650 Degrees Celsius. The method includes removing the monitor wafer and measuring a sheet resistivity of the monitor wafer. The method also determines the first temperature within a tolerance of less than 2 percent across the monitor wafer. The method operates the rapid thermal process using a plurality of production wafers if the first temperature is within a tolerance of a specification temperature.
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申请公布号 |
US6962884(B2) |
申请公布日期 |
2005.11.08 |
申请号 |
US20030743689 |
申请日期 |
2003.12.19 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
WU JINGANG;LIU AMY;WANG TONY;HUANG DENNIS |
分类号 |
H01L21/265;H01L21/324;H01L21/66;H01L23/544;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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