发明名称 POSITIVE RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE AND METHOD FOR FORMING PATTERN BY USING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for liquid immersion exposure and improved in such problems as collapse of a resist pattern due to post exposure delay between steps of exposure and PEB (post exposure bake), deterioration in the profile and production of scum during liquid immersion exposure, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition for liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and having the solubility with an alkali developing solution which increases by the effect of an acid; (B) a compound which generates an acid by irradiation with actinic rays or radiation; (C) a nitrogen-containing compound having no hydroxyl group; and (D) solvent. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005309376(A) 申请公布日期 2005.11.04
申请号 JP20050000713 申请日期 2005.01.05
申请人 FUJI PHOTO FILM CO LTD 发明人 KANDA HIROMI;KANNA SHINICHI;INABE HARUKI
分类号 G03F7/039;C08F20/12;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址
您可能感兴趣的专利