| 摘要 |
PROBLEM TO BE SOLVED: To obtain a power device capable of obtaining a large current with a good yield while employing a substrate having a micropipe for a semiconductor material such as SiC and GaN by solving the problems of prior art that if there is any micropipe, even only one, in the substrate, that element is bad one; if a device area is widened, the yield approaches zero, while if the device area is narrowed, the yield is improved, but the device is miniaturized to prevent a desired current from being yielded; if many small-sized elements are gathered and are connected in parallel, a desired current is ensured, but an excess volume is required corresponding to a fraction of a package to make the device voluminous. SOLUTION: A group of S transistors per one chip are manufactured, and are tested from an upper surface thereof keeping a chip or a wafer as it is, and a group of rejected transistors are maintained in the chip without being removed, and further a group of accepted transistors are connected to an external electrode. Consequently, there is saved the trouble of cutting off the group of the rejected transistors, and the group of the rejected transistors are made to actively function as heat dissipating members. COPYRIGHT: (C)2006,JPO&NCIPI
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