| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition method capable of performing vapor deposition while reducing fluctuation in the distribution of the film thickness. SOLUTION: In the film deposition method, the vapor deposition distribution of a material for depositing a thin film is unified by setting the difference in the number of times of scattering with inert gas is within 20% between a center part of a substrate and an end part of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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