发明名称 |
Light emitting diode and method of the same |
摘要 |
A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure includes two semiconductor layers of different doped types. The light-emitting structure is capable of emitting light when a current passes through. The silicon substrate includes two zones of different doped types. The bonding layer is interposed between the light-emitting structure and the silicon substrate so that the semiconductor layer and the zone closest to the bonding layer are of different doped types.
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申请公布号 |
US2005242358(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20040951043 |
申请日期 |
2004.09.24 |
申请人 |
TU CHUNG-CHENG;LIN JIN-YWAN |
发明人 |
TU CHUNG-CHENG;LIN JIN-YWAN |
分类号 |
H01L21/00;H01L33/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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