发明名称 Chemically amplified positive photo resist composition and method for forming resist pattern
摘要 The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
申请公布号 US2005244740(A1) 申请公布日期 2005.11.03
申请号 US20050522036 申请日期 2005.01.19
申请人 MARUYAMA KENJI;KURIHARA MASAKI;MIYAGI KEN;NIIKURA SATOSHI;SHIMATANI SATOSHI;MASUJIMA MASAHIRO;NITTA KAZUYUKI;YAMAGUCHI TOSHIHIRO;DOI KOUSUKE 发明人 MARUYAMA KENJI;KURIHARA MASAKI;MIYAGI KEN;NIIKURA SATOSHI;SHIMATANI SATOSHI;MASUJIMA MASAHIRO;NITTA KAZUYUKI;YAMAGUCHI TOSHIHIRO;DOI KOUSUKE
分类号 G03C1/492;G03F7/039;(IPC1-7):G03C1/492 主分类号 G03C1/492
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