发明名称 |
Chemically amplified positive photo resist composition and method for forming resist pattern |
摘要 |
The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
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申请公布号 |
US2005244740(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20050522036 |
申请日期 |
2005.01.19 |
申请人 |
MARUYAMA KENJI;KURIHARA MASAKI;MIYAGI KEN;NIIKURA SATOSHI;SHIMATANI SATOSHI;MASUJIMA MASAHIRO;NITTA KAZUYUKI;YAMAGUCHI TOSHIHIRO;DOI KOUSUKE |
发明人 |
MARUYAMA KENJI;KURIHARA MASAKI;MIYAGI KEN;NIIKURA SATOSHI;SHIMATANI SATOSHI;MASUJIMA MASAHIRO;NITTA KAZUYUKI;YAMAGUCHI TOSHIHIRO;DOI KOUSUKE |
分类号 |
G03C1/492;G03F7/039;(IPC1-7):G03C1/492 |
主分类号 |
G03C1/492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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