| 摘要 |
<p>Removing material substrate surface by inserting substrate with material in open processing vessel, closing processing vessel gas-tight, pressuring processing vessel to greater than atmospheric pressure, introducing pressurized processing solution in processing vessel to expose surface to pressurized processing solution and processing substrate to remove material from surface by allowing pressurized processing fluid to react with material. Removing a material from a surface of substrate comprises inserting the substrate with the material into an open processing vessel, closing the processing vessel and making it gas-tight, pressurising the processing vessel to greater than atmospheric pressure, introducing the pressurized processing solution into the pressurized processing vessel so that a surface of the substrate is exposed to the pressurized processing solution and processing the substrate to remove the material from the surface of the substrate by allowing the pressurized processing fluid to react with the material. The processing solution is maintained at higher than atmospheric pressure during introduction into the processing vessel and during part(s) of the processing of the substrate. Independent claims are included for: (1) drying substrate comprising positioning substrate in a gastight processing vessel, pressurizing the vessel to greater than atmospheric pressure, introducing pressurized rinsing liquid into the processing vessel to submerge the substrate and moving the processed substrate relative to the rinsing liquid so that surface tension gradient is created between meniscus on the substrate surface and remaining bulk portion of the rinsing liquid, the surface tension gradient drawing liquid from the substrate surface into the remaining bulk rinsing liquid.; and (2) material remover comprising processing vessel, pressurized processing solution source and drain valve.</p> |
