| 摘要 |
A static RAM which is a CMOS static RAM having first and second load transistors, first and second driver transistors, and first and second switching transistors in one memory cell includes: a laminated structure of a first polysilicon layer, a silicide layer and a second polysilicon layer, forming the gate regions of the second load and driver transistors in a body; an interconnection layer comprising a laminated structure of the silicide layer and the second polysilicon layer to form a p-n junction between the drain regions of the first load and driver transistors; and one contact for making the gate regions and the interconnection layer in a body by the second polysilicon layer. |
