发明名称 Semiconductor device fabrication method
摘要 A reduction of a leakage current as well as a decrease in the thickness of an insulating film is realized in a semiconductor device. To this end, a silicon oxide film and a silicon nitride film are formed on a substrate, which is then heated to a temperature within a range of 20° C.-600° C. so that a plasma nitridation process can be performed on the silicon nitride film. Further, a thermal process is performed in a non-oxide gas atmosphere. By performing these processes, the gate leakage current can be significantly reduced in the formed gate insulator, and the silicon oxide-equivalent thickness of the insulating film can be significantly decreased as well.
申请公布号 US6960502(B2) 申请公布日期 2005.11.01
申请号 US20030351433 申请日期 2003.01.27
申请人 FUJITSU LIMITED 发明人 YAMAGUCHI AKIHISA
分类号 H01L27/092;H01L21/265;H01L21/28;H01L21/314;H01L21/318;H01L21/8238;H01L29/51;H01L29/78;(IPC1-7):H01L21/310 主分类号 H01L27/092
代理机构 代理人
主权项
地址