发明名称 Film formation method, semiconductor element and method thereof, and method of manufacturing a disk-shaped storage medium
摘要 Relative movement occurs between the in-process substrate and the dropping section. While the substrate is rotated, the dropping section is relatively moved from an approximate center of the substrate toward an outer periphery thereof. While the dropping section relatively moves from the approximate center of the in-process substrate toward the outer periphery, the rotational frequency w for the substrate is decreased so that the solution film should not move due to the centrifugal force applied to a dropped solution film. Concurrently, feed rate v for the liquid from the dropping section is increased to form a solution film on the in-process substrate.
申请公布号 US6960540(B2) 申请公布日期 2005.11.01
申请号 US20010842403 申请日期 2001.04.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO SHINICHI;OKUMURA KATSUYA
分类号 B05D1/00;G03F7/16;G11B5/842;G11B7/26;H01L21/027;H01L21/312;H01L21/316;(IPC1-7):H01L21/30 主分类号 B05D1/00
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