| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a crystal epitaxy structure for a gallium-nitride compound semiconductor which reduces crystal defects, and to provide its manufacturing method. <P>SOLUTION: A manufacturing method includes step 41 for providing a base material 31 and performing surface overheat cleaning on the base material 31; step 42 for forming a low-temperature gallium-nitride buffer layer 32' on the base material 31 at a first temperature; step 43 for forming a high-temperature gallium-nitride buffer layer 32", by elevating the temperature and nucleating a crystal on the surface of the first gallium-nitride buffer layer; step 44 for decreasing the temperature and forming a second indium-gallium-nitride buffer layer 33 on the high-temperature gallium-nitride buffer layer 32" at a second temperature; and step 45 for elevating the temperature and forming a gallium-nitride crystal epitaxy layer 34 on the second indium-gallium-nitride buffer layer 33 at a third temperature. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
