| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antireflection film having high reflected light absorbing effects, not causing intermixing with a photoresist, and usable in a lithographic process which uses irradiated light of ArF excimer laser, an F<SB>2</SB>excimer laser or the like, and to provide a composition for forming the antireflection film. <P>SOLUTION: The antireflection film forming composition comprises a polymer, having a triazinetrione structure which can be produced by polymerizing an alkenyltriazinetrione compound, and a solvent. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
