Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface

摘要

Preparing the surface (3) of a semiconductor body (1) for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface. Preferred Features: The specific atmosphere contains oxygen, preferably atomic oxygen, ozone or a gas which releases atomic oxygen or ozone. The temperature jump is carried out at 400-500 [deg] C. The surface is cleaned before the temperature jump.