| 摘要 |
<p>Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films (18) of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers (17) to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer (17) is formed by LPCVD using silane and phosphene at a temperature in the range from about 570 degrees C to 595 degrees C. These capacitors are relatively precisely valued devices used particularly in applications such as filter/codecs. However, they are useful wherever integral capacitors are needed having high dielectric strength polyoxides, including such semiconductor integrated circuit devices as EPROMs and dynamic RAMs.</p> |
