| 摘要 |
PROBLEM TO BE SOLVED: To solve the serious problems that arise, due to a great number of dangling bonds remaining in the interface upon formation of a highly dielectric film on an Si substrate, concerning an increase in surface defect density (Dit), a reduction in mobility, an increase in interfacial reactivity, and the occurrence of a layer low in dielectric constant; and to solve the problem of band offsets not sufficiently available when an highly dielectric material is used for the gate insulating film. SOLUTION: By using a nonmetallic silicide thin film formed on a semiconductor substrate mainly comprising Si, a structure is obtained in low reactivity and stabler than a hydrogen termination structure. Interfacial roughness is thereby suppressed and, as the result, problems concerning an increase in surface defect density (Dit), a reduction in mobility, an increase in interfacial reactivity, and the occurrence of a layer low in dielectric constant, are made to be less serious. COPYRIGHT: (C)2006,JPO&NCIPI
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