SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability by providing a structure such that the impurity concentration is higher receding from a channel formation region (as farther away from the channel formation region). SOLUTION: The active layer of NTFT is formed of a channel forming region 102, first impurity region 103, second impurity region 104, and third impurity region 105. Here, the impurity concentration of each impurity region is set higher receding from the channel formation region 102. Furthermore, the first impurity region 102 is provided so as to overlap a sidewall 108, providing a substantial gate overlap structure with the sidewall 108 functioning as an electrode.