| 摘要 |
PROBLEM TO BE SOLVED: To provide a high critical face current superconducting oxide thin film by producing a relatively thick (RE)Ba<SB>2</SB>Cu<SB>3</SB>O<SB>7</SB>(wherein, RE is one kind of atom selected from Y, Nd, Sm, Eu, Gd, Dy, Ho, Er and Yb) äobviated as (RE)BCO} having high critical current density on a sapphire substrate without generating cracks, and to provide its production method. SOLUTION: The high critical face current superconducting oxide thin film is obtained, using an off-cut substrate cut and polished in a state of intentionally shifted by several degrees from the R face (1102) or the A face (1120) of sapphire single crystals, by producing a buffer layer on the substrate, and producing an (RE)BCO thin film thereon. The production method uses the same. COPYRIGHT: (C)2006,JPO&NCIPI
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