发明名称 |
Multi-level integrated photonic devices |
摘要 |
A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
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申请公布号 |
US2005232326(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050105552 |
申请日期 |
2005.04.14 |
申请人 |
BINOPTICS CORPORATION |
发明人 |
BEHFAR ALEX A.;GREEN MALCOLM R.;SCHREMER ALFRED T. |
分类号 |
G02B6/12;G02B6/122;G02B6/13;G02F1/017;H01S5/00;H01S5/026;H01S5/028;H01S5/0683;H01S5/10;H01S5/22;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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