| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus which can increase a throughput and selectivity in epitaxial growth using at least one of a silane-based gas and a germane-based gas and a chlorine gas. SOLUTION: The method comprises a first step of transporting a wafer 200 having an insulating layer in part of its surface and having a silicon layer exposed thereon into a reaction tube 203, a second step of supplying a source gas containing silane-based gas or a germane-based gas in the reaction tube 203, a third step of supplying a chlorine gas into the reaction tube 203, a fourth step of supplying a hydrogen gas into the reaction tube 203, and a fifth step of growing a silicon epitaxial film on the exposed silicon layer repetitively by a plurality of times. The quantity of chlorine gas supplied in the third step is set at 10-1,000 sccm. COPYRIGHT: (C)2006,JPO&NCIPI
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