| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for determining irradiated energy density of a laser beam that is not subject to variation in crystalline property of an irradiated film obtained by the influence of a change of a laser oscillator condition and the like when irradiating the laser beam to strengthen the crystalline property of the irradiated film, and a method for manufacturing a semiconductor substrate using the method as well as an apparatus for mamufacturing a semiconductor substrate using the same. SOLUTION: Laser beams having various irradiated energy densities are radiated to an irradiated film formed on a substrate, and surface scattering optical intensities of the irradiated film are measured for respective irradiated energy densities, thus preparing energy density and surface scattering optical intensity correspondence information. Here, the correspondence information is, for example, characteristic curves of irradiated energy densities shown in the figure and surface scattering optical intensities. Based on this correspondence information, an irradiated energy density is determined from surface scattering optical intensity as a preset target value. COPYRIGHT: (C)2006,JPO&NCIPI
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