| 摘要 |
Disclosed a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, 0<=y<=1); a first electrode layer of an n-GaN layer formed on the upper Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.
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