发明名称 |
Surface treatment of metal interconnect lines |
摘要 |
Methods and apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.
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申请公布号 |
US6955984(B2) |
申请公布日期 |
2005.10.18 |
申请号 |
US20030439358 |
申请日期 |
2003.05.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WAN WEN-KAI;LIN YIH-HSIUNG;LEI MING-DAI;PERNG BAW-CHING;LIN CHENG-CHUNG;LIN CHIA-HUI;LIU AI-SEN |
分类号 |
H01L21/288;H01L21/44;H01L21/445;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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