SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To eliminate the problem wherein reliability is deteriorated, when peeling between a protective film and an electrode film takes place due to reaction between solder and the electrode film, at the soldering of connections or between flux and the electrode film at soldering work. SOLUTION: The semiconductor device is a Schottky junction type semiconductor device having an n semiconductor layer 2; an insulating film 4 formed on the n-type semiconductor layer 2; a first electrode film 7 forming the n-type semiconductor layer 2 and a Schottky barrier through the opening of the insulating film 4; a second electrode film 8 which is formed on the first electrode film 7 and extends on the insulating film 4; the protective film 5 which is formed on the second electrode film layer 8 and extends on the insulating film 4; a fourth electrode film 10 which contacts the second electrode film 8 through the opening of the protective film 5 and extends on the protective film 5; and a third electrode film 9 which is formed on the fourth electrode film 10 and can be connected with soldering. Reliability in a reverse direction can be improved. The semiconductor device can be also applied to ohmic electrode, such as a p-n junction diode. COPYRIGHT: (C)2006,JPO&NCIPI