| 摘要 |
The invention relates to conductive integrated circuits disposed above a semiconductor substrate and a diode formed between two electrodes. In order to obtain a very small-sized diode, the following steps are carried out: creation of the electrodes (ELn, GRST), thermal oxidation of the electrodes then the substrate between the electrodes is bared, followed by the operations enumerated below: a) deposition of doped polycrystalline silicon in order to form a pole (42) of the diode, wherein the substrate forms the other pole; b) definition of a desired silicon pattern (14) covering the space left between the electrodes and also covering a region located outside said space; c) deposition of an insulating layer (18), local etching of an opining in said insulating layer above the polycrystalline silicon outside the space located between the electrodes, in order to form a displaced contact area, deposition of a metal coating and etching of the metal coating. The main application of the invention is the reading diode for a CCD-type reading register. |
