发明名称 |
Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer |
摘要 |
The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer ( 14 ) that contains for example praseodymium oxide is deposited onto a prepared wafer ( 12 ). A silicon layer ( 16 ) and on top of said silicon layer a cover layer ( 18 ) is deposited onto the metal oxide layer ( 14 ), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer ( 16 ) and the metal oxide layer ( 14 ) are converted to a metal silicide layer in lateral sections ( 20, 22 ) in which the cover layer ( 18 ) was previously removed.
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申请公布号 |
US2005227466(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050479300 |
申请日期 |
2005.04.05 |
申请人 |
KRUGER DIETMAR;GORYACHKO ANDRIY;KURPS RAINER;LIU JING P;OSTEN HANS-JORG |
发明人 |
KRUGER DIETMAR;GORYACHKO ANDRIY;KURPS RAINER;LIU JING P.;OSTEN HANS-JORG |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/417;H01L29/45;H01L29/51;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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